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Dual Bootstrapped 12 V MOSFET Driver with Output Disable ADP3418
FEATURES
All-in-one synchronous buck driver Bootstrapped high-side drive 1 PWM signal generates both drives Anticross-conduction protection circuitry Output disable control turns off both MOSFETs to float the output per Intel(R) VRM 10 and AMD Opteron specifications
GENERAL DESCRIPTION
The ADP3418 is a dual, high voltage MOSFET driver optimized for driving two N-channel MOSFETs, the two switches in a nonisolated, synchronous, buck power converter. Each of the drivers is capable of driving a 3000 pF load with a 30 ns transition time. One of the drivers can be bootstrapped, and is designed to handle the high voltage slew rate associated with floating highside gate drivers. The ADP3418 includes overlapping drive protection to prevent shoot-through current in the external MOSFETs. The OD pin shuts off both the high-side and the low-side MOSFETs to prevent rapid output capacitor discharge during system shutdowns. The ADP3418 is specified over the commercial temperature range of 0C to 85C, and is available in an 8-lead SOIC package.
APPLICATIONS
Multiphase desktop CPU supplies Single-supply synchronous buck converters
FUNCTIONAL BLOCK DIAGRAM
12V
CVCC VCC
4
D1 CBST2 CBST1 Q1 RG RBST1
7
ADP3418
1
BST DRVH
IN 2
8
DELAY SW
TO INDUCTOR
CMP
S R
Q
Q DELAY
VCC 6
5
DRVL PGND
Q2
CMP 1V
6
3
OD
Figure 1.
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.326.8703 (c) 2004 Analog Devices, Inc. All rights reserved.
03229-B-001
ADP3418 TABLE OF CONTENTS
Specifications..................................................................................... 3 Absolute Maximum Ratings............................................................ 4 ESD Caution.................................................................................. 4 Pin Configuration and Function Descriptions............................. 5 Timing Characteristics..................................................................... 6 Typical Performance Characteristics ............................................. 7 Theory of Operation ........................................................................ 9 Low-Side Driver............................................................................ 9 High-Side Driver .......................................................................... 9 Overlap Protection Circuit...........................................................9 Application Information................................................................ 10 Supply Capacitor Selection ....................................................... 10 Bootstrap Circuit ........................................................................ 10 MOSFET Selection..................................................................... 10 PC Board Layout Considerations................................................. 12 Outline Dimensions ....................................................................... 14 Ordering Guide .......................................................................... 14
REVISION HISTORY
8/04--Data Sheet Changed from Rev. A to Rev. B Updated Figure 1; Deleted Figure 2.....................................................1 Updated Specifications Table ...............................................................3 Updated Pin Description......................................................................5 Updated Theory of Operation .............................................................9 Updated Applications Section............................................................10 Change to Ordering Guide.................................................................14 4/04--Data Sheet Changed from Rev. 0 to Rev. A Updated Format...................................................................... Universal Change to General Description ...........................................................1 Change to Figure 13 ..............................................................................8 Change to Ordering Guide.................................................................12 3/03--Revision 0: Initial Version
Rev. B | Page 2 of 16
ADP3418 SPECIFICATIONS1
VCC = 12 V, BST = 4 V to 26 V, TA = 0C to 85C, unless otherwise noted. Table 1.
Parameter SUPPLY Supply Voltage Range Supply Current OD INPUT Input Voltage High Input Voltage Low Input Current Propagation Delay Time PWM INPUT Input Voltage High Input Voltage Low Input Current HIGH-SIDE DRIVER Output Resistance, Sourcing Current Output Resistance, Sinking Current Transition Times Symbol VCC ISYS Conditions Min 4.15 BST = 12 V, IN = 0 V 2.6 -1 tpdhOD tpdlOD See Figure 3 See Figure 3 3.0 -1 VBST - VSW = 12 V VBST - VSW = 12 V See Figure 4, VBST - VSW = 12 V, CLOAD = 3 nF See Figure 4, VBST - VSW = 12 V, CLOAD = 3 nF See Figure 4, VBST - VSW = 12 V VBST - VSW = 12 V 1.8 1.0 35 20 40 20 1.8 1.0 25 21 30 10 240 120 0.8 +1 3.0 2.5 45 30 65 35 3.0 2.5 35 30 60 20 25 20 0.8 +1 40 40 3 Typ Max 13.2 6 Unit V mA V V A ns ns V V A ns ns ns ns ns ns ns ns ns ns
trDRVH tfDRVH
Propagation Delay2 LOW-SIDE DRIVER Output Resistance, Sourcing Current Output Resistance, Sinking Current Transition Times Propagation Delay Timeout Delay
2
tpdhDRVH tpdlDRVH
trDRVL tfDRVL tpdhDRVL tpdlDRVL
See Figure 4, CLOAD = 3 nF See Figure 4, CLOAD = 3 nF See Figure 4 See Figure 4 SW = 5 V SW = PGND
90
1 2
All limits at temperature extremes are guaranteed via correlation using standard Statistical Quality Control (SQC). For propagation delays, tpdh refers to the specified signal going high, and tpdl refers to it going low.
Rev. B | Page 3 of 16
ADP3418 ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter VCC BST DC <200 ns BST to SW SW DC < 200 ns DRVH DRVL (< 200 ns) All Other Inputs and Outputs Operating Ambient Temperature Range Operating Junction Temperature Range Storage Temperature Range Junction-to-Air Thermal Resistance (JA) 2-Layer Board 4-Layer Board Lead Temperature (Soldering, 10 s) Infrared (15 s) Rating -0.3 V to +15 V -0.3 V to VCC + 15 V -0.3 V to 36 V -0.3 V to +15 V -5 V to +15 V -10 V to +25 V SW - 0.3 V to BST + 0.3 V -2 V to VCC + 0.3 V -0.3 V to VCC + 0.3 V 0C to 85C 0C to 150C -65C to +150C
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Absolute maximum ratings apply individually only, not in combination. Unless otherwise specified, all voltages are referenced to PGND.
123C/W 90C/W 300C 260C
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
Rev. B | Page 4 of 16
ADP3418 PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
BST 1 IN 2
8
DRVH
03229-B-002
SW TOP VIEW OD 3 (Not to Scale) 6 PGND VCC 4 5 DRVL
7
AD3418
Figure 2. Pin Configuration
Table 3. Pin Function Descriptions
Pin No. 1 2 3 4 5 6 7 8 Mnemonic BST IN OD VCC DRVL PGND SW DRVH Description Upper MOSFET Floating Bootstrap Supply. A capacitor connected between the BST and SW pins holds this bootstrapped voltage for the high-side MOSFET as it is switched. The capacitor should be between 100 nF and 1 F. Logic Level Input. This pin has primary control of the drive outputs. Output Disable. When low, this pin disables normal operation, forcing DRVH and DRVL low. Input Supply. This pin should be bypassed to PGND with ~1 F ceramic capacitor. Synchronous Rectifier Drive. Output drive for the lower (synchronous rectifier) MOSFET. Power Ground. Should be closely connected to the source of the lower MOSFET. This pin is connected to the buck switching node, close to the upper MOSFET's source. It is the floating return for the upper MOSFET drive signal. Buck Drive. Output drive for the upper (buck) MOSFET.
Rev. B | Page 5 of 16
ADP3418 TIMING CHARACTERISTICS
OD
tpdlOD
tpdhOD
DRVH OR DRVL
10%
Figure 3. Output Disable Timing Diagram
IN
tpdlDRVL tfDRVL
DRVL
tpdlDRVH
trDRVL
tfDRVH tpdhDRVH trDRVH
DRVH-SW
VTH
VTH
SW
1V
Figure 4. Timing Diagram. Timing is referenced to the 90% and 10% points, unless otherwise noted.
Rev. B | Page 6 of 16
03229-B-004
tpdhDRVL
03229-B-003
90%
ADP3418 TYPICAL PERFORMANCE CHARACTERISTICS
26
IN 1
VCC = 12V CLOAD = 3nF 24 DRVL
FALL TIME (ns)
DRVH 2
22
20
DRVH
DRVL
18
3
03229-B-005
16 0 25 50 75 100 JUNCTION TEMPERATURE (C) 125
Figure 5. DRVH Rise and DRVL Fall Times
Figure 8. DRVH and DRVL Fall Times vs. Temperature
IN
60 TA = 25C VCC = 12V 50 DRVH
1 DRVH
RISE TIME (ns)
40 DRVL 30
2
DRVL 3
03229-B-006
20
10 1 2 3 4 LOAD CAPACITANCE (nF) 5
Figure 6. DRVH Fall and DRVL Rise Times
40
Figure 9. DRVH and DRVL Rise Times vs. Load Capacitance
35
DRVH
VCC = 12V CLOAD = 3nF
TA = 25C VCC = 12V 30
DRVL
35
RISE TIME (ns)
FALL TIME (ns)
25
30
DRVL
20
DRVH
25
15
03229-B-007
20 0 25 50 75 100 JUNCTION TEMPERATURE (C) 125
10 1 2 3 4 LOAD CAPACITANCE (nF) 5
Figure 7. DRVH and DRVL Rise Times vs. Temperature
Rev. B | Page 7 of 16
Figure 10. DRVH and DRVL Fall Times vs. Load Capacitance
03229-B-010
03229-B-009
03229-B-008
ADP3418
60 TA = 25C VCC = 12V CLOAD = 3nF
5 TA = 25C CLOAD = 3nF 4
DRVL OUTPUT VOLTAGE (V)
03229-B-011
SUPPLY CURRENT (mA)
40
3
2
20
1
0 0 200 400 600 800 IN FREQUENCY (kHz) 1000 1200
0 0 1 2 3 VCC VOLTAGE (V) 4 5
Figure 11. Supply Current vs. Frequency
16 VCC = 12V CLOAD = 3nF fIN = 250kHz 15
SUPPLY CURRENT (mA)
Figure 13. DRVL Output Voltage vs. Supply Voltage
14
13
12 0 25 50 75 100 JUNCTION TEMPERATURE (C) 125
Figure 12. Supply Current vs. Temperature
03229-B-012
Rev. B | Page 8 of 16
03229-B-013
ADP3418 THEORY OF OPERATION
The ADP3418 is a dual MOSFET driver optimized for driving two N-channel MOSFETs in a synchronous buck converter topology. A single PWM input signal is all that is required to properly drive the high-side and the low-side MOSFETs. Each driver is capable of driving a 3 nF load at speeds up to 500 kHz. A more detailed description of the ADP3418 and its features follows. Refer to Figure 1.
OVERLAP PROTECTION CIRCUIT
The overlap protection circuit prevents both of the main power switches, Q1 and Q2, from being on at the same time. This is done to prevent shoot-through currents from flowing through both power switches and the associated losses that can occur during their on/off transitions. The overlap protection circuit accomplishes this by adaptively controlling the delay from the Q1 turn off to the Q2 turn on, and by internally setting the delay from the Q2 turn off to the Q1 turn on. To prevent the overlap of the gate drives during the Q1 turn off and the Q2 turn on, the overlap circuit monitors the voltage at the SW pin. When the PWM input signal goes low, Q1 will begin to turn off (after propagation delay). Before Q2 can turn on, the overlap protection circuit makes sure that SW has first gone high and then waits for the voltage at the SW pin to fall from VIN to 1 V. Once the voltage on the SW pin has fallen to 1 V, Q2 begins turn on. If the SW pin had not gone high first, then the Q2 turn on is delayed by a fixed 120 ns. By waiting for the voltage on the SW pin to reach 1 V or for the fixed delay time, the overlap protection circuit ensures that Q1 is off before Q2 turns on, regardless of variations in temperature, supply voltage, input pulse width, gate charge, and drive current. If SW does not go below 1 V after 240 ns, DRVL will turn on. This can occur if the current flowing in the output inductor is negative and is flowing through the high-side MOSFET body diode. To prevent the overlap of the gate drives during the Q2 turn off and the Q1 turn on, the overlap circuit provides an internal delay that is set to 40 ns. When the PWM input signal goes high, Q2 will begin to turn off (after a propagation delay), but before Q1 can turn on, the overlap protection circuit waits for the voltage at DRVL to drop to approximately one sixth of VCC. Once the voltage at DRVL has reached this point, the overlap protection circuit will wait for the 40 ns internal delay time. Once the delay period has expired, Q1 will begin turn on.
LOW-SIDE DRIVER
The low-side driver is designed to drive a ground-referenced N-channel MOSFET. The bias to the low-side driver is internally connected to the VCC supply and PGND. When the driver is enabled, the driver's output is 180 degrees out of phase with the PWM input. When the ADP3418 is disabled, the low-side gate is held low.
HIGH-SIDE DRIVER
The high-side driver is designed to drive a floating N-channel MOSFET. The bias voltage for the high-side driver is developed by an external bootstrap supply circuit, which is connected between the BST and SW pins. The bootstrap circuit comprises a diode, D1, and bootstrap capacitor, CBST1. CBST2 and RBST are included to reduce the highside gate drive voltage and limit the switch node slew-rate (referred to as a Boot-SnapTM circuit, see the Application Information section for more details). When the ADP3418 is starting up, the SW pin is at ground, so the bootstrap capacitor will charge up to VCC through D1. When the PWM input goes high, the high-side driver will begin to turn on the high-side MOSFET, Q1, by pulling charge out of CBST1 and CBST2. As Q1 turns on, the SW pin will rise up to VIN, forcing the BST pin to VIN + VC(BST), which is enough gate-to-source voltage to hold Q1 on. To complete the cycle, Q1 is switched off by pulling the gate down to the voltage at the SW pin. When the low-side MOSFET, Q2, turns on, the SW pin is pulled to ground. This allows the bootstrap capacitor to charge up to VCC again. The high-side driver's output is in phase with the PWM input. When the driver is disabled, the high-side gate is held low.
Rev. B | Page 9 of 16
ADP3418 APPLICATION INFORMATION
SUPPLY CAPACITOR SELECTION
For the supply input (VCC) of the ADP3418, a local bypass capacitor is recommended to reduce the noise and to supply some of the peak currents drawn. Use a 4.7 F, low ESR capacitor. Multilayer ceramic chip (MLCC) capacitors provide the best combination of low ESR and small size. Keep the ceramic capacitor as close as possible to the ADP3418. A small-signal diode can be used for the bootstrap diode due to the ample gate drive voltage supplied by VCC. The bootstrap diode must have a minimum 15 V rating to withstand the maximum supply voltage. The average forward current can be estimated by
I F ( AVG) = Q GATE x f MAX
(3)
BOOTSTRAP CIRCUIT
The bootstrap circuit uses a charge storage capacitor (CBST) and a diode, as shown in Figure 1. These components can be selected after the high-side MOSFET has been chosen. The bootstrap capacitor must have a voltage rating that is able to handle twice the maximum supply voltage. A minimum 50 V rating is recommended. The capacitor values are determined using the following equations: Q C BST1 +C BST2 = 10 x GATE (1) VGATE C BST1 VGATE = (2) C BST1 + C BST2 VCC - VD where QGATE is the total gate charge of the high-side MOSFET at VGATE, VGATE is the desired gate drive voltage (usually in the range of 5-10 V, 7 V being typical), and VD is the voltage drop across D1. Rearranging Equations 1 and 2 to solve for CBST1 yields
C BST1= 10 x QGATE VCC - VD
where fMAX is the maximum switching frequency of the controller. The peak surge current rating should be calculated using:
I F ( PEAK ) = VCC - VD R BST
(4)
MOSFET SELECTION
When interfacing the ADP3418 to external MOSFETs, there are a few considerations that the designer should be aware of. These will help to make a more robust design that will minimize stresses on both the driver and MOSFETs. These stresses include exceeding the short-time duration voltage ratings on the driver pins as well as the external MOSFET. It is also highly recommended to use the Boot-Snap circuit to improve the interaction of the driver with the characteristics of the MOSFETs. If a simple bootstrap arrangement is used, make sure to then include a proper snubber network on the SW node.
High-Side (Control) MOSFETs
The high-side MOSFET is usually selected to be high speed to minimize switching losses (see any ADI Flex-modeTM controller datasheet for more details on MOSFET losses). This usually implies a low gate resistance and low input capacitance/charge device. Yet, there is also a significant source lead inductance that can exist (this depends mainly on the MOSFET package; it is best to contact the MOSFET vendor for this information). The ADP3418 DRVH output impedance and the input resistance of the MOSFETs determine the rate of charge delivery to the gate's internal capacitance, which determines the speed at which the MOSFETs turn on and off. However, due to potentially large currents flowing in the MOSFETs at the on and off times (this current is usually larger at turn off due to ramping up of the output current in the output inductor), the source lead inductance will generate a significant voltage across it when the high-side MOSFETs switch off. This will create a significant drain-source voltage spike across the internal die of the MOSFETs and can lead to catastrophic avalanche. The mechanisms involved in this avalanche condition can be referenced in literature from the MOSFET suppliers.
CBST2 can then be found by rearranging Equation 1:
C BST2 = 10 x QGATE - C BST1 VGATE
For example, an NTD60N02 has a total gate charge of about 12 nC at VGATE = 7 V. Using VCC = 12 V and VD = 1 V, we find CBST1 = 12 nF and CBST2 = 6.8 nF. Good quality ceramic capacitors should be used. RBST is used for slew-rate limiting to minimize the ringing at the switch node. It also provides peak current limiting through D1. An RBST value of 1.5 to 2.2 is a good choice. The resistor needs to be able to handle at least 250 mW due to the peak currents that flow through it.
Rev. B | Page 10 of 16
ADP3418
The MOSFET vendor should provide a maximum voltage slew rate at drain current rating such that this can be designed around. Once you have this specification, the next step is to determine the maximum current you expect to see in the MOSFET. This can be done with the following equation:
I MAX = I DC ( per phase ) + (VCC - VOUT )x D MAX (5) f MAX x L OUT
does not exceed the thermal rating of the driver (see the Flexmode controller data sheet for details). The next concern for the low-side MOSFETs is based on preventing them from inadvertently being switched on when the high-side MOSFET turns on. This occurs due to the draingate (Miller, also specified as Crss) capacitance of the MOSFET. When the drain of the low-side MOSFET is switched to VCC by the high-side turning on (at a rate dV/dt), the internal gate of the low-side MOSFET will be pulled up by an amount roughly equal to VCC x (Crss/Ciss). It is important to make sure this does not put the MOSFET into conduction. Another consideration is the non-overlap circuitry of the ADP3418 which attempts to minimize the non-overlap period. During the state of the high-side turning off to low-side turning on, the SW pin is monitored (as well as the conditions of SW prior to switching) to adequately prevent overlap. However, during the low-side turn off to high-side turn on, the SW pin does not contain information for determining the proper switching time, so the state of the DRVL pin is monitored to go below one sixth of VCC and then a delay is added. But due to the Miller capacitance and internal delays of the low-side MOSFET gate, one must ensure the Miller to input capacitance ratio is low enough and the low-side MOSFET internal delays are not large enough to allow accidental turn on of the low-side when the high-side turns on. A spreadsheet is available from ADI that will assist the designer in the proper selection of low-side MOSFETs.
Here, DMAX is determined for the VR controller being used with the driver. Please note this current gets divided roughly equally between MOSFETs if more than one is used (assume a worstcase mismatch of 30% for design margin). LOUT is the output inductor value. When producing your design, there is no exact method for calculating the dV/dt due to the parasitic effects in the external MOSFETs as well as the PCB. However, it can be measured to determine if it is safe. If it appears the dV/dt is too fast, an optional gate resistor can be added between DRVH and the high-side MOSFETs. This resistor will slow down the dV/dt, but it will also increase the switching losses in the high-side MOSFETs. The ADP3418 has been optimally designed with an internal drive impedance that will work with most MOSFETs to switch them efficiently yet minimize dV/dt. However, some high-speed MOSFETs may require this external gate resistor depending on the currents being switched in the MOSFET.
Low-Side (Synchronous) MOSFETs
The low-side MOSFETs are usually selected to have a low onresistance to minimize conduction losses. This usually implies a large input gate capacitance and gate charge. The first concern is to make sure the power delivery from the ADP3418's DRVL
Rev. B | Page 11 of 16
ADP3418 PC BOARD LAYOUT CONSIDERATIONS
Use the following general guidelines when designing printed circuit boards. * * * * Trace out the high current paths and use short, wide (>20 mil) traces to make these connections. Connect the PGND pin of the ADP3418 as closely as possible to the source of the lower MOSFET. The VCC bypass capacitor should be located as close as possible to the VCC and PGND pins. Use vias to other layers when possible to maximize thermal conduction away from the IC.
CBST1 CBST2
D1
RBST
The circuit in Figure 15 shows how four drivers can be combined with the ADP3188 to form a total power conversion solution for generating VCC(CORE) for an Intel CPU that is VRD 10.x compliant. Figure 14 shows an example of the typical land patterns based on the guidelines given previously. For more detailed layout guidelines for a complete CPU voltage regulator subsystem, refer to the ADP3188 data sheet.
03229-B-014
CVCC
Figure 14. External Component Placement Example for the ADP3418 Driver
Rev. B | Page 12 of 16
LI 370nH 18A
VIN 12V
2700MF/16V/3.3A x 2 SANYO MV-WX SERIES
R3 2.2
C8 12nF
+ C1
+ C2
C7 4.7F
C6 6.8nF
VIN RTN
D2 1N4148
1 BST 2 IN 3 OD
U2 ADP3418
DRVH 8 SW 7 PGND 6 DRVL 5
+
C24 C31
Q1 NTD60N02
560F/4V x 8 L4 320nH/1.4m SANYO SEPC SERIES 5m EACH
VCC (CORE) 0.8375 V - 1.6V 95A TDC, 119A PK
4 VCC
+
VCC (CORE) RTN
C5 4.7F
R4 2.2
C12 12nF
Q3 NTD110N02
Q4 NTD110N02
D1 1N4148
D3 1N4148
1 BST 2 IN 3 OD
U3 ADP3418
C10 6.8nF
DRVH 8 SW 7 PGND 6 DRVL 5
C11 4.7F Q5 NTD60N02
10F x 18 MLCC IN SOCKET
L3 320nH/1.4m
4 VCC
C9 4.7F
C3 + 100F
C4 1F
R2 137k 1%
1 VID4 2 VID3 3 VID2 4 VID1 5 VID0
6 VID5 7 FBRTN 8 FB 9 COMP 10 PWRGD
11 EN 12 DELAY
U1 ADP3188
VCC 28 PWM1 27 PWM2 26 PWM3 25 PWM4 24 SW1 23 SW2 22 SW3 21 SW4 20 GND 19 CSCOMP 18 CSSUM 17
560pF CCS1
R5 2.2
C16 12nF
Q7 NTD110N02
Q8 NTD110N02
D4 1N4148
2 IN
U4 ADP3418
1 BST
C14 6.8nF
DRVH 8 SW 7
Figure 15. VRD 10.x Compliant Intel CPU Supply Circuit
Rev. B | Page 13 of 16
3 OD 4 VCC
C15 4.7F Q9 NTD60N02
PGND 6 DRVL 5
FROM CPU
L4 320nH/1.4m
CB
C21 1nF
470pF
C13 4.7F
POWER GOOD
CA RB RA 1.21k 470pF 12.1k
CFB 22pF
RPH4 158k, 1%
CCS2 RCS1 35.7k 84.5k RCS2 1.5nF
R6 2.2
C20 12nF
Q11 NTD110N02
Q12 NTD110N02
ENABLE
13 RT 14 RAMPADJ ILIMIT 15
RPH2 RPH3 158k, RPH1 1% 158k, 158k, 1% 1%
C19 4.7F D5 1N4148
CSREF 16
C22 1nF
CLDY 39nF
RLDY 470k
U5 ADP3418
1 BST 2 IN 3 OD 4 VCC
C16 6.8nF
DRVH 8 SW 7 PGND 6 DRVL 5
RT 137k 1%
Q13 NTD60N02
L5 320nH/1.4m
RTH1 100k, 5% NTC
C23 1nF
RLIM 150k 1%
C17 4.7F
Q15 NTD110N02
Q16 NTD110N02
ADP3418
03229-B-015
ADP3418 OUTLINE DIMENSIONS
5.00 (0.1968) 4.80 (0.1890)
8 5 4
4.00 (0.1574) 3.80 (0.1497) 1
6.20 (0.2440) 5.80 (0.2284)
1.27 (0.0500) BSC 0.25 (0.0098) 0.10 (0.0040)
1.75 (0.0688) 1.35 (0.0532)
0.50 (0.0196) x 45 0.25 (0.0099)
0.51 (0.0201) COPLANARITY SEATING 0.31 (0.0122) 0.10 PLANE
8 0.25 (0.0098) 0 1.27 (0.0500) 0.40 (0.0157) 0.17 (0.0067)
COMPLIANT TO JEDEC STANDARDS MS-012AA CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN
Figure 16. 8-Lead Standard Small Outline Package [SOIC] Narrow Body (R-8) Dimensions shown in millimeters and (inches)
ORDERING GUIDE
Model ADP3418KRZ1 ADP3418KRZ-REEL1 Temperature Range 0C to 85C 0C to 85C Package Description SOIC SOIC Package Option RN-8 RN-8
1
Z = Pb-free part.
Rev. B | Page 14 of 16
ADP3418 NOTES
Rev. B | Page 15 of 16
ADP3418 NOTES
(c) 2004 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. C03229-0-8/04(B)
Rev. B | Page 16 of 16

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